Mapping the effect of substrate temperature inhomogeneity during microwave plasma-enhanced chemical vapour deposition nanocrystalline diamond growth

Research output: Contribution to journalArticleResearchpeer review

Authors

  • William G.S. Leigh
  • Jerome A. Cuenca
  • Evan L.H. Thomas
  • Soumen Mandal
  • Oliver A. Williams

External Research Organisations

  • Cardiff University
View graph of relations

Details

Original languageEnglish
Pages (from-to)328-337
Number of pages10
JournalCARBON
Volume201
Publication statusPublished - 5 Jan 2023
Externally publishedYes

Abstract

It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.

Keywords

    CVD Diamond, Film uniformity, Mapping, Substrate temperature

ASJC Scopus subject areas

Cite this

Mapping the effect of substrate temperature inhomogeneity during microwave plasma-enhanced chemical vapour deposition nanocrystalline diamond growth. / Leigh, William G.S.; Cuenca, Jerome A.; Thomas, Evan L.H. et al.
In: CARBON, Vol. 201, 05.01.2023, p. 328-337.

Research output: Contribution to journalArticleResearchpeer review

Download
@article{4a5faa5d3c7f4a49976b375f85ce9a60,
title = "Mapping the effect of substrate temperature inhomogeneity during microwave plasma-enhanced chemical vapour deposition nanocrystalline diamond growth",
abstract = "It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.",
keywords = "CVD Diamond, Film uniformity, Mapping, Substrate temperature",
author = "Leigh, {William G.S.} and Cuenca, {Jerome A.} and Thomas, {Evan L.H.} and Soumen Mandal and Williams, {Oliver A.}",
note = "Publisher Copyright: {\textcopyright} 2022 The Authors",
year = "2023",
month = jan,
day = "5",
doi = "10.1016/j.carbon.2022.09.036",
language = "English",
volume = "201",
pages = "328--337",
journal = "CARBON",
issn = "0008-6223",
publisher = "Elsevier Ltd.",

}

Download

TY - JOUR

T1 - Mapping the effect of substrate temperature inhomogeneity during microwave plasma-enhanced chemical vapour deposition nanocrystalline diamond growth

AU - Leigh, William G.S.

AU - Cuenca, Jerome A.

AU - Thomas, Evan L.H.

AU - Mandal, Soumen

AU - Williams, Oliver A.

N1 - Publisher Copyright: © 2022 The Authors

PY - 2023/1/5

Y1 - 2023/1/5

N2 - It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.

AB - It is important to account for variance in substrate temperature during microwave plasma-enhanced chemical vapour deposition (MPECVD) nanocrystalline diamond growth, as this has a significant impact on the uniformity of the grown film. In this work, an in-situ method of mapping the substrate temperature under MPECVD growth conditions is demonstrated, employing a mirror galvanometer to scan the field of view of a dual-wavelength pyrometer across the substrate. Temperature maps generated were compared to plasma electron densities simulated using a finite element model. An increase in temperature and simulated plasma density were seen towards the centre of the holder. The properties of nanocrystalline diamond films were mapped using ex-situ Raman spectroscopy and spectroscopic ellipsometry (SE). A greater SE-measured bulk thickness and bulk sp 3 fraction, as well as a greater first-order diamond Raman intensity and lower full width at half maximum were seen in the higher-temperature central region, demonstrating the impact of substrate temperature inhomogeneity during growth. The temperature mapping technique demonstrated allows easy evaluation of the impact of substrate holder design, microwave power and chamber pressure on substrate temperature homogeneity, and therefore optimisation of growth conditions for uniform diamond film growth.

KW - CVD Diamond

KW - Film uniformity

KW - Mapping

KW - Substrate temperature

UR - http://www.scopus.com/inward/record.url?scp=85138177973&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2022.09.036

DO - 10.1016/j.carbon.2022.09.036

M3 - Article

VL - 201

SP - 328

EP - 337

JO - CARBON

JF - CARBON

SN - 0008-6223

ER -

By the same author(s)