Details
Original language | English |
---|---|
Pages (from-to) | 272-282 |
Number of pages | 11 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 107 |
Early online date | 26 Jul 2012 |
Publication status | Published - Dec 2012 |
Abstract
We contact p-type wafers and boron-diffused layers by laser ablation of a passivating aluminum oxide and silicon nitride stack and subsequent in-line high-rate evaporation of aluminum. We measure saturation current densities at the base contacts of 2.5×10 6-1.9×10 7 fA/cm 2 for base resistivities of 0.5-3.8 Ω cm and 491-905 fA/cm 2 for the contacts to boron-diffused layers of sheet resistances of 23-86 Ω/sq. The contact resistivity of Al layers to p-type silicon with surface doping densities of 4×10 15-3×10 19 cm -3 is in the range of 4-0.1 mΩ cm 2, respectively. The measured contact properties allow for the fabrication of highly efficient 'passivated emitter and rear cells' (PERC) and 'passivated emitter and rear totally diffused cells' (PERT). Numerical simulations show that evaporated rear contacts in combination with screen printed contacts at the front allow for energy conversion efficiencies of 20.6% and of 21.1%, for PERC and PERT cells, respectively. The simulated free energy losses show that such cells are not limited by the in-line evaporated point contacts on the rear side.
Keywords
- Contact recombination, Contact resistivity, In-line evaporation, Loss analysis, Rear contact, Silicon solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 107, 12.2012, p. 272-282.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Local rear contacts to silicon solar cells by in-line high-rate evaporation of aluminum
AU - Mader, Christoph
AU - Müller, Jens
AU - Eidelloth, Stefan
AU - Brendel, Rolf
PY - 2012/12
Y1 - 2012/12
N2 - We contact p-type wafers and boron-diffused layers by laser ablation of a passivating aluminum oxide and silicon nitride stack and subsequent in-line high-rate evaporation of aluminum. We measure saturation current densities at the base contacts of 2.5×10 6-1.9×10 7 fA/cm 2 for base resistivities of 0.5-3.8 Ω cm and 491-905 fA/cm 2 for the contacts to boron-diffused layers of sheet resistances of 23-86 Ω/sq. The contact resistivity of Al layers to p-type silicon with surface doping densities of 4×10 15-3×10 19 cm -3 is in the range of 4-0.1 mΩ cm 2, respectively. The measured contact properties allow for the fabrication of highly efficient 'passivated emitter and rear cells' (PERC) and 'passivated emitter and rear totally diffused cells' (PERT). Numerical simulations show that evaporated rear contacts in combination with screen printed contacts at the front allow for energy conversion efficiencies of 20.6% and of 21.1%, for PERC and PERT cells, respectively. The simulated free energy losses show that such cells are not limited by the in-line evaporated point contacts on the rear side.
AB - We contact p-type wafers and boron-diffused layers by laser ablation of a passivating aluminum oxide and silicon nitride stack and subsequent in-line high-rate evaporation of aluminum. We measure saturation current densities at the base contacts of 2.5×10 6-1.9×10 7 fA/cm 2 for base resistivities of 0.5-3.8 Ω cm and 491-905 fA/cm 2 for the contacts to boron-diffused layers of sheet resistances of 23-86 Ω/sq. The contact resistivity of Al layers to p-type silicon with surface doping densities of 4×10 15-3×10 19 cm -3 is in the range of 4-0.1 mΩ cm 2, respectively. The measured contact properties allow for the fabrication of highly efficient 'passivated emitter and rear cells' (PERC) and 'passivated emitter and rear totally diffused cells' (PERT). Numerical simulations show that evaporated rear contacts in combination with screen printed contacts at the front allow for energy conversion efficiencies of 20.6% and of 21.1%, for PERC and PERT cells, respectively. The simulated free energy losses show that such cells are not limited by the in-line evaporated point contacts on the rear side.
KW - Contact recombination
KW - Contact resistivity
KW - In-line evaporation
KW - Loss analysis
KW - Rear contact
KW - Silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=84867581113&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2012.06.047
DO - 10.1016/j.solmat.2012.06.047
M3 - Article
AN - SCOPUS:84867581113
VL - 107
SP - 272
EP - 282
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -