Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors |
| Subtitle of host publication | Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Pages | 289-290 |
| Number of pages | 2 |
| Publication status | Published - 31 Dec 2013 |
| Event | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
Keywords
- Electron Interaction Correction, Fractional Quantum Hall Effect, Negative Magnetoresistance
ASJC Scopus subject areas
- Agricultural and Biological Sciences(all)
- Ecology, Evolution, Behavior and Systematics
- Environmental Science(all)
- Ecology
- Agricultural and Biological Sciences(all)
- Plant Science
- Physics and Astronomy(all)
- General Physics and Astronomy
- Environmental Science(all)
- Nature and Landscape Conservation
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 289-290 (AIP Conference Proceedings; Vol. 1566).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas
AU - Bockhorn, L.
AU - Gornyi, I. V.
AU - Schuh, D.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2013/12/31
Y1 - 2013/12/31
N2 - A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
AB - A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al0.3Ga0.7As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.
KW - Electron Interaction Correction
KW - Fractional Quantum Hall Effect
KW - Negative Magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=84907312926&partnerID=8YFLogxK
U2 - 10.1063/1.4848399
DO - 10.1063/1.4848399
M3 - Conference contribution
AN - SCOPUS:84907312926
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 289
EP - 290
BT - Physics of Semiconductors
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -