Details
| Original language | English |
|---|---|
| Pages (from-to) | 154-157 |
| Number of pages | 4 |
| Journal | Journal of crystal growth |
| Volume | 425 |
| Early online date | 21 Feb 2019 |
| Publication status | Published - 1 Sept 2019 |
Keywords
- A1. Growth models, A1. Surface structure, A3. Molecular beam epitaxy, B1. Silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 425, 01.09.2019, p. 154-157.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Influence of (7×7)-"1×1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)
AU - Fissel, Andreas
AU - Roy Chaudhuri, Ayan
AU - Krügener, Jan
AU - Osten, Hans-Jörg
N1 - Funding information: This work was financial supported by the Deutsche Forschungsgemeinschaft (DFG project FI 726-10 ).
PY - 2019/9/1
Y1 - 2019/9/1
KW - A1. Growth models
KW - A1. Surface structure
KW - A3. Molecular beam epitaxy
KW - B1. Silicon
UR - http://www.scopus.com/inward/record.url?scp=84979961833&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2015.02.041
DO - 10.1016/j.jcrysgro.2015.02.041
M3 - Article
AN - SCOPUS:84979961833
VL - 425
SP - 154
EP - 157
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
ER -