Influence of (7×7)-"1×1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)

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Original languageEnglish
Pages (from-to)154-157
Number of pages4
JournalJournal of crystal growth
Volume425
Early online date21 Feb 2019
Publication statusPublished - 1 Sept 2019

Keywords

    A1. Growth models, A1. Surface structure, A3. Molecular beam epitaxy, B1. Silicon

ASJC Scopus subject areas

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Influence of (7×7)-"1×1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111). / Fissel, Andreas; Roy Chaudhuri, Ayan; Krügener, Jan et al.
In: Journal of crystal growth, Vol. 425, 01.09.2019, p. 154-157.

Research output: Contribution to journalArticleResearchpeer review

Fissel A, Roy Chaudhuri A, Krügener J, Osten HJ. Influence of (7×7)-"1×1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111). Journal of crystal growth. 2019 Sept 1;425:154-157. Epub 2019 Feb 21. doi: 10.1016/j.jcrysgro.2015.02.041, 10.1016/j.jcrysgro.2019.125155
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AU - Fissel, Andreas

AU - Roy Chaudhuri, Ayan

AU - Krügener, Jan

AU - Osten, Hans-Jörg

N1 - Funding information: This work was financial supported by the Deutsche Forschungsgemeinschaft (DFG project FI 726-10 ).

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KW - A1. Growth models

KW - A1. Surface structure

KW - A3. Molecular beam epitaxy

KW - B1. Silicon

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