Details
| Original language | English |
|---|---|
| Pages (from-to) | 85-91 |
| Number of pages | 7 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 173 |
| Publication status | Published - Dec 2017 |
Abstract
Carrier-selective contact schemes, like polysilicon on oxide (POLO), provide low contact resistivities while preserving an excellent passivation quality. These junctions offer an important additional feature compared to a-Si/c-Si heterojunctions. We find that the formation of n-type POLO junctions lead to a huge increase of the Shockley-Read-Hall (SRH) lifetime of the substrate, a prerequisite for highly efficient solar cells. The SRH lifetime improvement can be observed for both bulk polarities and for a variety of bulk resistivities. Thus we suggest that the highly doped POLO junction getters impurities that have more or less symmetric SRH capture cross sections. We are able to achieve SRH lifetimes of > 50 ms. By applying POLO junctions to interdigitated back contact cells, we achieve cells with an efficiency of 25%.
Keywords
- Gettering, Passivating contact, Polysilicon, Silicon solar cell
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Solar Energy Materials and Solar Cells, Vol. 173, 12.2017, p. 85-91.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Improvement of the SRH bulk lifetime upon formation of n-type POLO junctions for 25% efficient Si solar cells
AU - Krügener, Jan
AU - Haase, Felix
AU - Rienäcker, Michael
AU - Brendel, Rolf
AU - Osten, H. Jörg
AU - Peibst, Robby
PY - 2017/12
Y1 - 2017/12
N2 - Carrier-selective contact schemes, like polysilicon on oxide (POLO), provide low contact resistivities while preserving an excellent passivation quality. These junctions offer an important additional feature compared to a-Si/c-Si heterojunctions. We find that the formation of n-type POLO junctions lead to a huge increase of the Shockley-Read-Hall (SRH) lifetime of the substrate, a prerequisite for highly efficient solar cells. The SRH lifetime improvement can be observed for both bulk polarities and for a variety of bulk resistivities. Thus we suggest that the highly doped POLO junction getters impurities that have more or less symmetric SRH capture cross sections. We are able to achieve SRH lifetimes of > 50 ms. By applying POLO junctions to interdigitated back contact cells, we achieve cells with an efficiency of 25%.
AB - Carrier-selective contact schemes, like polysilicon on oxide (POLO), provide low contact resistivities while preserving an excellent passivation quality. These junctions offer an important additional feature compared to a-Si/c-Si heterojunctions. We find that the formation of n-type POLO junctions lead to a huge increase of the Shockley-Read-Hall (SRH) lifetime of the substrate, a prerequisite for highly efficient solar cells. The SRH lifetime improvement can be observed for both bulk polarities and for a variety of bulk resistivities. Thus we suggest that the highly doped POLO junction getters impurities that have more or less symmetric SRH capture cross sections. We are able to achieve SRH lifetimes of > 50 ms. By applying POLO junctions to interdigitated back contact cells, we achieve cells with an efficiency of 25%.
KW - Gettering
KW - Passivating contact
KW - Polysilicon
KW - Silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=85020002959&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2017.05.055
DO - 10.1016/j.solmat.2017.05.055
M3 - Article
AN - SCOPUS:85020002959
VL - 173
SP - 85
EP - 91
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -