Details
| Original language | English |
|---|---|
| Article number | 18 |
| Journal | EPJ Photovoltaics |
| Volume | 14 |
| Issue number | 18 |
| Publication status | Published - 26 Apr 2023 |
Abstract
I-V measurements are sensitive to the number and positioning of current and voltage sensing contacts. For busbarless solar cells, measurement setups have been developed using current collection wires and separate voltage sense contacts. Placing the latter at a defined position enables a grid resistance neglecting measurement and thus I-V characteristics independent from the contacting system. This technique has been developed for solar cells having a finger grid and good conductivity in the direction of the fingers. The optimal position of the sense contact in case of finger-free silicon heterojunction solar cells has not yet been studied. Here, the lateral charge carrier transport occurs in a transparent conductive oxide layer resulting in a higher lateral resistance. We perform finite difference method simulations of HJT solar cells without front metallization to investigate the impact of high lateral resistances on the I-V measurement of solar cells. We show the high sensitivity on the number of used wires for contacting as well as the position of the sense contact for the voltage measurement. Using the simulations, we are able to explain the high difference of up to 7.5% in fill factor measurements of metal free solar cells with varying TCO sheet resistances between two measurement systems using different contacting setups. We propose a method to compensate for the contacting system to achieve a grid-resistance neglecting measurement with both systems allowing a reduction of the FF difference to below 1.5%.
Keywords
- Contacting, Fill factor, Heterojunction solar cell, I-V measurement, Metal-grid free, Module integration
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: EPJ Photovoltaics, Vol. 14, No. 18, 18, 26.04.2023.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Impact of the contacting scheme on I-V measurements of metallization-free silicon heterojunction solar cells
AU - Brinkmann, Malte
AU - Haase, Felix
AU - Bothe, Karsten
AU - Bittkau, Karsten
AU - Lambertz, Andreas
AU - Duan, Weiyuan
AU - Ding, Kaining
AU - Sperlich, Hans Peter
AU - Waltinger, Andreas
AU - Schulte-Huxel, Henning
N1 - Funding Information: This work was financially supported by the German Federal Ministry for Economic Affairs and Climate Action (BMWK) under contact number 03EE1080C (TOP). The authors thank J. Hensen, M. Wolf and D. Sylla (all ISFH) for their contribution to the measurements of the metallization-free solar cells.
PY - 2023/4/26
Y1 - 2023/4/26
N2 - I-V measurements are sensitive to the number and positioning of current and voltage sensing contacts. For busbarless solar cells, measurement setups have been developed using current collection wires and separate voltage sense contacts. Placing the latter at a defined position enables a grid resistance neglecting measurement and thus I-V characteristics independent from the contacting system. This technique has been developed for solar cells having a finger grid and good conductivity in the direction of the fingers. The optimal position of the sense contact in case of finger-free silicon heterojunction solar cells has not yet been studied. Here, the lateral charge carrier transport occurs in a transparent conductive oxide layer resulting in a higher lateral resistance. We perform finite difference method simulations of HJT solar cells without front metallization to investigate the impact of high lateral resistances on the I-V measurement of solar cells. We show the high sensitivity on the number of used wires for contacting as well as the position of the sense contact for the voltage measurement. Using the simulations, we are able to explain the high difference of up to 7.5% in fill factor measurements of metal free solar cells with varying TCO sheet resistances between two measurement systems using different contacting setups. We propose a method to compensate for the contacting system to achieve a grid-resistance neglecting measurement with both systems allowing a reduction of the FF difference to below 1.5%.
AB - I-V measurements are sensitive to the number and positioning of current and voltage sensing contacts. For busbarless solar cells, measurement setups have been developed using current collection wires and separate voltage sense contacts. Placing the latter at a defined position enables a grid resistance neglecting measurement and thus I-V characteristics independent from the contacting system. This technique has been developed for solar cells having a finger grid and good conductivity in the direction of the fingers. The optimal position of the sense contact in case of finger-free silicon heterojunction solar cells has not yet been studied. Here, the lateral charge carrier transport occurs in a transparent conductive oxide layer resulting in a higher lateral resistance. We perform finite difference method simulations of HJT solar cells without front metallization to investigate the impact of high lateral resistances on the I-V measurement of solar cells. We show the high sensitivity on the number of used wires for contacting as well as the position of the sense contact for the voltage measurement. Using the simulations, we are able to explain the high difference of up to 7.5% in fill factor measurements of metal free solar cells with varying TCO sheet resistances between two measurement systems using different contacting setups. We propose a method to compensate for the contacting system to achieve a grid-resistance neglecting measurement with both systems allowing a reduction of the FF difference to below 1.5%.
KW - Contacting
KW - Fill factor
KW - Heterojunction solar cell
KW - I-V measurement
KW - Metal-grid free
KW - Module integration
UR - http://www.scopus.com/inward/record.url?scp=85156190850&partnerID=8YFLogxK
U2 - 10.1051/epjpv/2023009
DO - 10.1051/epjpv/2023009
M3 - Article
AN - SCOPUS:85156190850
VL - 14
JO - EPJ Photovoltaics
JF - EPJ Photovoltaics
IS - 18
M1 - 18
ER -