Details
| Original language | English |
|---|---|
| Place of Publication | Cham |
| Publisher | Springer Nature |
| Number of pages | 124 |
| ISBN (electronic) | 9783030689407 |
| ISBN (print) | 978-3-030-68939-1, 978-3-030-68942-1 |
| Publication status | Published - 2021 |
Abstract
Keywords
- GaN Transistors for Efficient Power Conversion, gate driver IC design for Silicon and GaN transistors, High-Frequency GaN Electronic Devices, High-Voltage Charge Storing, High-Voltage Energy Storing
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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Cham: Springer Nature, 2021. 124 p.
Research output: Book/Report › Monograph › Research › peer review
}
TY - BOOK
T1 - Highly Integrated Gate Drivers for Si and GaN Power Transistors
AU - Seidel, Achim
AU - Wicht, Bernhard
PY - 2021
Y1 - 2021
N2 - This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
AB - This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
KW - GaN Transistors for Efficient Power Conversion
KW - gate driver IC design for Silicon and GaN transistors
KW - High-Frequency GaN Electronic Devices
KW - High-Voltage Charge Storing
KW - High-Voltage Energy Storing
UR - http://www.scopus.com/inward/record.url?scp=85150917649&partnerID=8YFLogxK
U2 - 10.1007/978-3-030-68940-7
DO - 10.1007/978-3-030-68940-7
M3 - Monograph
SN - 978-3-030-68939-1
SN - 978-3-030-68942-1
BT - Highly Integrated Gate Drivers for Si and GaN Power Transistors
PB - Springer Nature
CY - Cham
ER -