Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Dushyant Singh
  • Tharundev V V
  • Subha Maity
  • Dhammapriy Gayakwad
  • H. Jörg Osten
  • Saurabh Lodha
  • Krista R. Khiangte

External Research Organisations

  • Indian Institute of Technology Gandhinagar (IITGN)
  • Indian Institute of Technology Bombay (IITB)
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Details

Original languageEnglish
Article number127972
Number of pages10
JournalJournal of crystal growth
Volume649
Early online date28 Oct 2024
Publication statusPublished - 1 Jan 2025

Abstract

The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.

Keywords

    Epitaxial growth, GeSn alloy, RF sputtering, Solid phase epitaxy

ASJC Scopus subject areas

Cite this

Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy. / Singh, Dushyant; V V, Tharundev; Maity, Subha et al.
In: Journal of crystal growth, Vol. 649, 127972, 01.01.2025.

Research output: Contribution to journalArticleResearchpeer review

Singh D, V V T, Maity S, Gayakwad D, Jörg Osten H, Lodha S et al. Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy. Journal of crystal growth. 2025 Jan 1;649:127972. Epub 2024 Oct 28. doi: 10.1016/j.jcrysgro.2024.127972
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abstract = "The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.",
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T1 - Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

AU - Singh, Dushyant

AU - V V, Tharundev

AU - Maity, Subha

AU - Gayakwad, Dhammapriy

AU - Jörg Osten, H.

AU - Lodha, Saurabh

AU - Khiangte, Krista R.

N1 - Publisher Copyright: © 2024 Elsevier B.V.

PY - 2025/1/1

Y1 - 2025/1/1

N2 - The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.

AB - The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.

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