Details
Original language | English |
---|---|
Article number | 127972 |
Number of pages | 10 |
Journal | Journal of crystal growth |
Volume | 649 |
Early online date | 28 Oct 2024 |
Publication status | Published - 1 Jan 2025 |
Abstract
The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.
Keywords
- Epitaxial growth, GeSn alloy, RF sputtering, Solid phase epitaxy
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 649, 127972, 01.01.2025.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy
AU - Singh, Dushyant
AU - V V, Tharundev
AU - Maity, Subha
AU - Gayakwad, Dhammapriy
AU - Jörg Osten, H.
AU - Lodha, Saurabh
AU - Khiangte, Krista R.
N1 - Publisher Copyright: © 2024 Elsevier B.V.
PY - 2025/1/1
Y1 - 2025/1/1
N2 - The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.
AB - The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.
KW - Epitaxial growth
KW - GeSn alloy
KW - RF sputtering
KW - Solid phase epitaxy
UR - http://www.scopus.com/inward/record.url?scp=85207694835&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2024.127972
DO - 10.1016/j.jcrysgro.2024.127972
M3 - Article
AN - SCOPUS:85207694835
VL - 649
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
M1 - 127972
ER -