Details
| Original language | English |
|---|---|
| Pages (from-to) | 1212-1216 |
| Number of pages | 5 |
| Journal | Journal of Applied Crystallography |
| Volume | 53 |
| Publication status | Published - 1 Oct 2020 |
Abstract
The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2θ/φ scans along [100], [110] and [310] directions as well as azimuthal φ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations.
Keywords
- Coincidence site lattices, Dislocation network, Ge/Si, Grazing incidence, Heteroepitaxy, X-ray diffraction
ASJC Scopus subject areas
- Biochemistry, Genetics and Molecular Biology(all)
- General Biochemistry,Genetics and Molecular Biology
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Journal of Applied Crystallography, Vol. 53, 01.10.2020, p. 1212-1216.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system
AU - Barnscheidt, Yvo
AU - Schmidt, Jan
AU - Osten, H. Jörg
N1 - Funding information: We would like to express sincere gratitude to the Deutsche Forschungsgemeinschaft for funding our research under project No. 389061803.
PY - 2020/10/1
Y1 - 2020/10/1
N2 - The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2θ/φ scans along [100], [110] and [310] directions as well as azimuthal φ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations.
AB - The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2θ/φ scans along [100], [110] and [310] directions as well as azimuthal φ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations.
KW - Coincidence site lattices
KW - Dislocation network
KW - Ge/Si
KW - Grazing incidence
KW - Heteroepitaxy
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=85092583538&partnerID=8YFLogxK
U2 - 10.1107/S1600576720009255
DO - 10.1107/S1600576720009255
M3 - Article
AN - SCOPUS:85092583538
VL - 53
SP - 1212
EP - 1216
JO - Journal of Applied Crystallography
JF - Journal of Applied Crystallography
SN - 0021-8898
ER -