Details
| Original language | English |
|---|---|
| Pages (from-to) | 39913-39916 |
| Number of pages | 4 |
| Journal | ACS Omega |
| Volume | 7 |
| Issue number | 44 |
| Early online date | 25 Oct 2022 |
| Publication status | Published - 8 Nov 2022 |
Abstract
Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Chemical Engineering(all)
- General Chemical Engineering
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In: ACS Omega, Vol. 7, No. 44, 08.11.2022, p. 39913-39916.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Electrical Properties of Thin ZrSe3Films for Device Applications
AU - Thole, Lars
AU - Belke, Christopher
AU - Locmelis, Sonja
AU - Behrens, Peter
AU - Haug, Rolf J.
N1 - Publisher Copyright: © 2022 American Chemical Society. All rights reserved.
PY - 2022/11/8
Y1 - 2022/11/8
N2 - Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
AB - Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85141369817&partnerID=8YFLogxK
U2 - 10.1021/acsomega.2c04198
DO - 10.1021/acsomega.2c04198
M3 - Article
AN - SCOPUS:85141369817
VL - 7
SP - 39913
EP - 39916
JO - ACS Omega
JF - ACS Omega
IS - 44
ER -