Details
| Original language | English |
|---|---|
| Title of host publication | 2016 21st International Conference on Ion Implantation Technology, IIT 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9781509020232 |
| Publication status | Published - 20 Mar 2017 |
| Event | 21st International Conference on Ion Implantation Technology, IIT 2016 - Tainan, Taiwan Duration: 26 Sept 2016 → 30 Sept 2016 |
Publication series
| Name | Proceedings of the International Conference on Ion Implantation Technology |
|---|
Abstract
Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.
Keywords
- deactivation, passivating contacts, polycrystalline silicon, solar cells
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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2016 21st International Conference on Ion Implantation Technology, IIT 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7882868 (Proceedings of the International Conference on Ion Implantation Technology).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells
AU - Krügener, Jan
AU - Tetzlaff, Dominic
AU - Barnscheidt, Yvo
AU - Wietler, Tobias
AU - Larionova, Yevgeniya
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Höhne, Uwe
AU - Kähler, Jan Dirk
PY - 2017/3/20
Y1 - 2017/3/20
N2 - Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.
AB - Passivating junctions, like hole-collecting p+-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal treatment to activate their excellent passivation and contact properties. Aside from surface passivation and from contact resistance between poly-Si and the substrate, the sheet resistance within the poly-Si is another important parameter for solar cell design. We present electrical investigations of in situ boron-doped (deposited by low pressure chemical vapor deposition) and ion-implanted (intrinsically deposited and subsequently ion-implanted with boron) p+-poly-Si/SiOx/c-Si stacks after annealing. We find electrical deactivation of boron after annealing which strongly depends on the total boron concentration and the subsequent annealing temperature.
KW - deactivation
KW - passivating contacts
KW - polycrystalline silicon
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=85018610810&partnerID=8YFLogxK
U2 - 10.1109/iit.2016.7882868
DO - 10.1109/iit.2016.7882868
M3 - Conference contribution
AN - SCOPUS:85018610810
T3 - Proceedings of the International Conference on Ion Implantation Technology
BT - 2016 21st International Conference on Ion Implantation Technology, IIT 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Ion Implantation Technology, IIT 2016
Y2 - 26 September 2016 through 30 September 2016
ER -