Details
| Original language | English |
|---|---|
| Pages (from-to) | 2238-2245 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 29 |
| Issue number | 5 |
| Publication status | Published - May 2014 |
Abstract
Silicon carbide (SiC) based power semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature, and system power density. This paper presents a comparison of silicon (Si) and SiC device technologies for the use in hybrid electric vehicle traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modeling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situations, leading to an improved estimation of the benefit which can be expected from systems utilizing SiC technology. This paper concludes that the SiC devices can lead to a reduction in chip area and semiconductor losses by more than 50% at the same time in hard switching applications with partial load dominated mission profiles.
Keywords
- Design methodology, hybrid electric vehicles (HEVs), IGBTs, JFETs, MOSFETs, power semiconductor devices, silicon carbide (SiC)
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: IEEE Transactions on Power Electronics, Vol. 29, No. 5, 05.2014, p. 2238-2245.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Characterization and scalable modeling of power semiconductors for optimized design of traction inverters with si-and sic-devices
AU - Merkert, Arvid
AU - Krone, Tobias
AU - Mertens, Axel
PY - 2014/5
Y1 - 2014/5
N2 - Silicon carbide (SiC) based power semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature, and system power density. This paper presents a comparison of silicon (Si) and SiC device technologies for the use in hybrid electric vehicle traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modeling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situations, leading to an improved estimation of the benefit which can be expected from systems utilizing SiC technology. This paper concludes that the SiC devices can lead to a reduction in chip area and semiconductor losses by more than 50% at the same time in hard switching applications with partial load dominated mission profiles.
AB - Silicon carbide (SiC) based power semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature, and system power density. This paper presents a comparison of silicon (Si) and SiC device technologies for the use in hybrid electric vehicle traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modeling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situations, leading to an improved estimation of the benefit which can be expected from systems utilizing SiC technology. This paper concludes that the SiC devices can lead to a reduction in chip area and semiconductor losses by more than 50% at the same time in hard switching applications with partial load dominated mission profiles.
KW - Design methodology
KW - hybrid electric vehicles (HEVs)
KW - IGBTs
KW - JFETs
KW - MOSFETs
KW - power semiconductor devices
KW - silicon carbide (SiC)
UR - http://www.scopus.com/inward/record.url?scp=84893088457&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2013.2294682
DO - 10.1109/TPEL.2013.2294682
M3 - Article
AN - SCOPUS:84893088457
VL - 29
SP - 2238
EP - 2245
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
SN - 0885-8993
IS - 5
ER -