Details
| Original language | English |
|---|---|
| Article number | 235401 |
| Journal | Physical Review B |
| Volume | 112 |
| Issue number | 23 |
| Publication status | Published - 15 Dec 2025 |
Abstract
This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe2 nanosheets, derived from the bulk single crystal. Contrary to the conventional trend observed in two-dimensional systems, we find a semiconducting to metallic resistivity behavior with decreasing thickness. The analysis of low-temperature conduction indicates an increased density of states at the Fermi level with decreasing thickness, which is further corroborated by gate bias-dependent conductance measurement. The enhanced conductivity in thinner flake is attributed to the n-type doping arising from surface defect states. The presence and evolution of these defect states with thickness are probed by thickness-dependent room-temperature Raman spectroscopy. Our study provides insights into the thickness-dependent electronic transport mechanism of SnSe2 and the crucial role of defect states in governing the observed conductivity behavior.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 112, No. 23, 235401, 15.12.2025.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Anomalous electrical transport in SnSe2 nanosheets
T2 - Role of thickness and surface defect states
AU - Lakhara, Aarti
AU - Thole, Lars
AU - Haug, Rolf J.
AU - Bhobe, P. A.
N1 - Publisher Copyright: © (2025), (American Physical Society). All rights reserved.
PY - 2025/12/15
Y1 - 2025/12/15
N2 - This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe2 nanosheets, derived from the bulk single crystal. Contrary to the conventional trend observed in two-dimensional systems, we find a semiconducting to metallic resistivity behavior with decreasing thickness. The analysis of low-temperature conduction indicates an increased density of states at the Fermi level with decreasing thickness, which is further corroborated by gate bias-dependent conductance measurement. The enhanced conductivity in thinner flake is attributed to the n-type doping arising from surface defect states. The presence and evolution of these defect states with thickness are probed by thickness-dependent room-temperature Raman spectroscopy. Our study provides insights into the thickness-dependent electronic transport mechanism of SnSe2 and the crucial role of defect states in governing the observed conductivity behavior.
AB - This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe2 nanosheets, derived from the bulk single crystal. Contrary to the conventional trend observed in two-dimensional systems, we find a semiconducting to metallic resistivity behavior with decreasing thickness. The analysis of low-temperature conduction indicates an increased density of states at the Fermi level with decreasing thickness, which is further corroborated by gate bias-dependent conductance measurement. The enhanced conductivity in thinner flake is attributed to the n-type doping arising from surface defect states. The presence and evolution of these defect states with thickness are probed by thickness-dependent room-temperature Raman spectroscopy. Our study provides insights into the thickness-dependent electronic transport mechanism of SnSe2 and the crucial role of defect states in governing the observed conductivity behavior.
UR - http://www.scopus.com/inward/record.url?scp=105027385095&partnerID=8YFLogxK
U2 - 10.1103/hrp5-pts7
DO - 10.1103/hrp5-pts7
M3 - Article
AN - SCOPUS:105027385095
VL - 112
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 23
M1 - 235401
ER -