Details
| Original language | English |
|---|---|
| Article number | 125569 |
| Journal | Journal of Crystal Growth |
| Volume | 535 |
| Early online date | 20 Feb 2020 |
| Publication status | Published - 1 Apr 2020 |
Abstract
In this work, we adapted the growth process of carbon-mediated epitaxy from Ge and SiGe layers on Si(0 0 1) for layers on Si(1 1 1). Using atomic force microscopy, it was possible to measure a surface roughness of less than 1 nm for all samples grown with a C submonolayer. The degree of relaxation and Ge content of the layers was obtained by X-ray diffraction in skew geometry due to the low thickness of the layers. The layers are between 20 nm and 40 nm thick and fully relaxed with a Ge content between 0.5<x<1. By monitoring the growth process with RHEED, it was shown that the layers exhibit a c(2×8) reconstruction.
Keywords
- A1. Virtual substrate, A1. X-ray diffraction, A3. Carbon-mediated epitaxy, B1. SiGe, B1. Silicon germanium
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of Crystal Growth, Vol. 535, 125569, 01.04.2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy
AU - Genath, Hannah
AU - Schmidt, Jan
AU - Osten, H. Jörg
PY - 2020/4/1
Y1 - 2020/4/1
N2 - In this work, we adapted the growth process of carbon-mediated epitaxy from Ge and SiGe layers on Si(0 0 1) for layers on Si(1 1 1). Using atomic force microscopy, it was possible to measure a surface roughness of less than 1 nm for all samples grown with a C submonolayer. The degree of relaxation and Ge content of the layers was obtained by X-ray diffraction in skew geometry due to the low thickness of the layers. The layers are between 20 nm and 40 nm thick and fully relaxed with a Ge content between 0.5
AB - In this work, we adapted the growth process of carbon-mediated epitaxy from Ge and SiGe layers on Si(0 0 1) for layers on Si(1 1 1). Using atomic force microscopy, it was possible to measure a surface roughness of less than 1 nm for all samples grown with a C submonolayer. The degree of relaxation and Ge content of the layers was obtained by X-ray diffraction in skew geometry due to the low thickness of the layers. The layers are between 20 nm and 40 nm thick and fully relaxed with a Ge content between 0.5
KW - A1. Virtual substrate
KW - A1. X-ray diffraction
KW - A3. Carbon-mediated epitaxy
KW - B1. SiGe
KW - B1. Silicon germanium
UR - http://www.scopus.com/inward/record.url?scp=85079840694&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2020.125569
DO - 10.1016/j.jcrysgro.2020.125569
M3 - Article
AN - SCOPUS:85079840694
VL - 535
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 125569
ER -