Details
| Original language | English |
|---|---|
| Article number | 2200809 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 220 |
| Issue number | 16 |
| Early online date | 14 Feb 2023 |
| Publication status | Published - 18 Aug 2023 |
| Externally published | Yes |
Abstract
Herein, carbon-implanted high-temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main, hard-to-avoid impurities in crystal growth. Oxygen is believed to lead to absorption in the deep UV below a wavelength of 250 nm. In contrast, carbon is the most likely candidate to be responsible for a distinct absorption band around 265 nm. This interpretation has recently been challenged. In this study, carbon-implanted and HTA AlN layers with ion fluences above 8.1 × 1015 cm−2 are analyzed using low-temperature and time-resolved cathodoluminescence spectroscopy. Due to the high concentration of oxygen inside the AlN, as a result of the HTA process, a DAP transition between a most likely carbon-related acceptor and ON is observed. The measured temperature- and power-dependent blueshift of the peak emission energy as well as the luminescence transients can be clearly explained by a continuous change from a DAP transition at low temperature to a free electron to acceptor transition with increasing temperature. The findings are supported by a configurational coordinate model that describes the measured behavior qualitatively.
Keywords
- AlN, cathodoluminescence, donor–acceptor pair, high-temperature annealing, ion implantation
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Materials Chemistry
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 220, No. 16, 2200809, 18.08.2023.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - A Combination of Ion Implantation and High-Temperature Annealing: Donor–Acceptor Pairs in Carbon-Implanted AlN
AU - Peters, Lukas
AU - Spende, Hendrik
AU - Wolter, Stefan
AU - Margenfeld, Christoph
AU - Ronning, Carsten
AU - Voss, Tobias
AU - Waag, Andreas
N1 - Publisher Copyright: © 2023 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH.
PY - 2023/8/18
Y1 - 2023/8/18
N2 - Herein, carbon-implanted high-temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main, hard-to-avoid impurities in crystal growth. Oxygen is believed to lead to absorption in the deep UV below a wavelength of 250 nm. In contrast, carbon is the most likely candidate to be responsible for a distinct absorption band around 265 nm. This interpretation has recently been challenged. In this study, carbon-implanted and HTA AlN layers with ion fluences above 8.1 × 1015 cm−2 are analyzed using low-temperature and time-resolved cathodoluminescence spectroscopy. Due to the high concentration of oxygen inside the AlN, as a result of the HTA process, a DAP transition between a most likely carbon-related acceptor and ON is observed. The measured temperature- and power-dependent blueshift of the peak emission energy as well as the luminescence transients can be clearly explained by a continuous change from a DAP transition at low temperature to a free electron to acceptor transition with increasing temperature. The findings are supported by a configurational coordinate model that describes the measured behavior qualitatively.
AB - Herein, carbon-implanted high-temperature annealed (HTA) AlN layers are analyzed and donor–acceptor pair (DAP) transitions probably between the two most abundant impurities, carbon and oxygen, are identified. Both are regarded as the main, hard-to-avoid impurities in crystal growth. Oxygen is believed to lead to absorption in the deep UV below a wavelength of 250 nm. In contrast, carbon is the most likely candidate to be responsible for a distinct absorption band around 265 nm. This interpretation has recently been challenged. In this study, carbon-implanted and HTA AlN layers with ion fluences above 8.1 × 1015 cm−2 are analyzed using low-temperature and time-resolved cathodoluminescence spectroscopy. Due to the high concentration of oxygen inside the AlN, as a result of the HTA process, a DAP transition between a most likely carbon-related acceptor and ON is observed. The measured temperature- and power-dependent blueshift of the peak emission energy as well as the luminescence transients can be clearly explained by a continuous change from a DAP transition at low temperature to a free electron to acceptor transition with increasing temperature. The findings are supported by a configurational coordinate model that describes the measured behavior qualitatively.
KW - AlN
KW - cathodoluminescence
KW - donor–acceptor pair
KW - high-temperature annealing
KW - ion implantation
UR - http://www.scopus.com/inward/record.url?scp=85151323197&partnerID=8YFLogxK
U2 - 10.1002/pssa.202200809
DO - 10.1002/pssa.202200809
M3 - Article
AN - SCOPUS:85151323197
VL - 220
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 16
M1 - 2200809
ER -