Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of the International Conference on Ion Implantation Technology |
| Herausgeber/-innen | Mulpuri V. Rao |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 9781479952120 |
| Publikationsstatus | Veröffentlicht - 29 Okt. 2014 |
| Veranstaltung | 20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, USA / Vereinigte Staaten Dauer: 30 Juni 2014 → 4 Juli 2014 |
Publikationsreihe
| Name | Proceedings of the International Conference on Ion Implantation Technology |
|---|
Abstract
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type solar cells, e.g. for passivated emitter and rear, totally doped (PERT) cells. Although fully ion-implanted high efficiency solar cells have been reported recently, annealing of crystal defects resulting from B implantation is still challenging. We present structural investigations of implant-induced crystal defects after ion implantation of B on randomly textured Si(100) and subsequent annealing. We find that the resulting defect distribution after annealing for 20 min at 900 °C is strongly affected by the surface morphology. Ion implantation of 2·1015 cm□2 B through a 20 nm thick, thermally grown screening oxide on a sample tilted by 6 ° towards <100> results in 3 different local defect densities: (i) for those sides of the pyramids which are tilted into the ion beam, (ii) for those sides which are tilted out of the beam and (iii) for the valleys in between the pyramids. This difference in defect density is mirrored by the effective local ion doses as obtained from process simulations. After annealing for 20 min at 1050 °C defects are observed only within the valleys of the texture.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
Ziele für nachhaltige Entwicklung
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- BibTex
- RIS
Proceedings of the International Conference on Ion Implantation Technology. Hrsg. / Mulpuri V. Rao. Institute of Electrical and Electronics Engineers Inc., 2014. 6940060 (Proceedings of the International Conference on Ion Implantation Technology).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Structural investigation of ion implantation of boron on random pyramid textured Si(100) for photovoltaic applications
AU - Krugener, Jan
AU - Bugiel, Eberhard
AU - Osten, Hans-Jörg
AU - Peibst, Robby
AU - Kiefer, Fabian
AU - Ohrdes, Tobias
AU - Brendel, Rolf
PY - 2014/10/29
Y1 - 2014/10/29
N2 - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type solar cells, e.g. for passivated emitter and rear, totally doped (PERT) cells. Although fully ion-implanted high efficiency solar cells have been reported recently, annealing of crystal defects resulting from B implantation is still challenging. We present structural investigations of implant-induced crystal defects after ion implantation of B on randomly textured Si(100) and subsequent annealing. We find that the resulting defect distribution after annealing for 20 min at 900 °C is strongly affected by the surface morphology. Ion implantation of 2·1015 cm□2 B through a 20 nm thick, thermally grown screening oxide on a sample tilted by 6 ° towards <100> results in 3 different local defect densities: (i) for those sides of the pyramids which are tilted into the ion beam, (ii) for those sides which are tilted out of the beam and (iii) for the valleys in between the pyramids. This difference in defect density is mirrored by the effective local ion doses as obtained from process simulations. After annealing for 20 min at 1050 °C defects are observed only within the valleys of the texture.
AB - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type solar cells, e.g. for passivated emitter and rear, totally doped (PERT) cells. Although fully ion-implanted high efficiency solar cells have been reported recently, annealing of crystal defects resulting from B implantation is still challenging. We present structural investigations of implant-induced crystal defects after ion implantation of B on randomly textured Si(100) and subsequent annealing. We find that the resulting defect distribution after annealing for 20 min at 900 °C is strongly affected by the surface morphology. Ion implantation of 2·1015 cm□2 B through a 20 nm thick, thermally grown screening oxide on a sample tilted by 6 ° towards <100> results in 3 different local defect densities: (i) for those sides of the pyramids which are tilted into the ion beam, (ii) for those sides which are tilted out of the beam and (iii) for the valleys in between the pyramids. This difference in defect density is mirrored by the effective local ion doses as obtained from process simulations. After annealing for 20 min at 1050 °C defects are observed only within the valleys of the texture.
KW - crystal defects
KW - Ion implantation
KW - process simulation
KW - silicon
KW - solar cells
KW - transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84910030171&partnerID=8YFLogxK
U2 - 10.1109/iit.2014.6940060
DO - 10.1109/iit.2014.6940060
M3 - Conference contribution
AN - SCOPUS:84910030171
T3 - Proceedings of the International Conference on Ion Implantation Technology
BT - Proceedings of the International Conference on Ion Implantation Technology
A2 - Rao, Mulpuri V.
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Ion Implantation Technology, IIT 2014
Y2 - 30 June 2014 through 4 July 2014
ER -