Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • D. Schwendt
  • H. J. Osten
  • P. Shekhter
  • M. Eizenberg

Organisationseinheiten

Externe Organisationen

  • Technion-Israel Institute of Technology
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Details

OriginalspracheEnglisch
Aufsatznummer232905
FachzeitschriftApplied physics letters
Jahrgang100
Ausgabenummer23
PublikationsstatusVeröffentlicht - 4 Juni 2012

Abstract

Thin epitaxial rare earth oxide layers on Si exhibit K values that are much larger than the known bulk values. We investigate the thickness dependence of that enhancement effect for epitaxial Gd 2O 3 on Si(111). Controlling the oxide composition in ternary (Gd 1-xNd x) 2O 3 thin films enables us to tune the lattice mismatch to silicon and thus the K values of the dielectric layer from 13 (close to the bulk value) up to 20. We show that simple tetragonal distortion of the cubic lattice is not sufficient to explain the enhancement in K. Therefore, we propose more severe strain induced structural phase deformations.

ASJC Scopus Sachgebiete

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Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. / Schwendt, D.; Osten, H. J.; Shekhter, P. et al.
in: Applied physics letters, Jahrgang 100, Nr. 23, 232905, 04.06.2012.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Schwendt D, Osten HJ, Shekhter P, Eizenberg M. Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. Applied physics letters. 2012 Jun 4;100(23):232905. doi: 10.1063/1.4727893
Schwendt, D. ; Osten, H. J. ; Shekhter, P. et al. / Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon. in: Applied physics letters. 2012 ; Jahrgang 100, Nr. 23.
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