Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Dushyant Singh
  • Tharundev V V
  • Subha Maity
  • Dhammapriy Gayakwad
  • H. Jörg Osten
  • Saurabh Lodha
  • Krista R. Khiangte

Externe Organisationen

  • Indian Institute of Technology Gandhinagar (IITGN)
  • Indian Institute of Technology Bombay (IITB)
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Details

OriginalspracheEnglisch
Aufsatznummer127972
Seitenumfang10
FachzeitschriftJournal of crystal growth
Jahrgang649
Frühes Online-Datum28 Okt. 2024
PublikationsstatusVeröffentlicht - 1 Jan. 2025

Abstract

The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.

ASJC Scopus Sachgebiete

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Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy. / Singh, Dushyant; V V, Tharundev; Maity, Subha et al.
in: Journal of crystal growth, Jahrgang 649, 127972, 01.01.2025.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Singh D, V V T, Maity S, Gayakwad D, Jörg Osten H, Lodha S et al. Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy. Journal of crystal growth. 2025 Jan 1;649:127972. Epub 2024 Okt 28. doi: 10.1016/j.jcrysgro.2024.127972
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abstract = "The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.",
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T1 - Growth of single crystalline GeSn alloy epilayer on Gd2O3/Si (111) engineered insulating substrate using RF sputtering and solid phase epitaxy

AU - Singh, Dushyant

AU - V V, Tharundev

AU - Maity, Subha

AU - Gayakwad, Dhammapriy

AU - Jörg Osten, H.

AU - Lodha, Saurabh

AU - Khiangte, Krista R.

N1 - Publisher Copyright: © 2024 Elsevier B.V.

PY - 2025/1/1

Y1 - 2025/1/1

N2 - The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.

AB - The article showcases a low-cost, low-temperature deposition and HVM technique to develop single crystalline GeSn alloy epilayers on Gd2O3/Si (111) substrate. First, GeSn alloy amorphous layer is deposited on the insulating substrates using an Radio Frequency (RF) sputtering apparatus. Subsequently, an inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) process is used to deposit a SiO2 capping layer to protect against Sn out-diffusion during heat treatment. The samples are then subjected to solid phase epitaxy (SPE) at 450 °C, 550 °C, and 650 °C. Sample processed for SPE at 450 °C has weak crystallinity and only shows Type-A stacking. Those processed for SPE at 550 °C and 650 °C, on the other hand, have revealed formation of the single-crystalline GeSn alloy epilayer with Type-A and Type-B stacking. However, SPE at 650 °C revealed tin out-diffusion and segregation effects. This work is significant for enabling the preparation of high-Sn-content GeSn alloy epilayers on insulating Gd2O3/Si (111) substrates, as it requires the initial deposition of a GeSn amorphous alloy epilayer using RF sputtering. This advancement promises benefits which includes advantages such as lower operating voltage, reduced leakage current, and minimized parasitic and short-channel effects, making it ideal for advancing RF technology.

KW - Epitaxial growth

KW - GeSn alloy

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