Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • E. Garralaga Rojas
  • B. Terheiden
  • H. Plagwitz
  • J. Hensen
  • C. Baur
  • G. F.X. Strobl
  • R. Brendel

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
  • Europäische Weltraumforschungs- und Technologiezentrum (ESTEC)
  • AZUR SPACE Solar Power GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)231-233
Seitenumfang3
FachzeitschriftElectrochemistry communications
Jahrgang12
Ausgabenummer2
Frühes Online-Datum4 Dez. 2009
PublikationsstatusVeröffentlicht - Feb. 2010
Extern publiziertJa

Abstract

We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.

ASJC Scopus Sachgebiete

Zitieren

Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes. / Garralaga Rojas, E.; Terheiden, B.; Plagwitz, H. et al.
in: Electrochemistry communications, Jahrgang 12, Nr. 2, 02.2010, S. 231-233.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Garralaga Rojas, E, Terheiden, B, Plagwitz, H, Hensen, J, Baur, C, Strobl, GFX & Brendel, R 2010, 'Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes', Electrochemistry communications, Jg. 12, Nr. 2, S. 231-233. https://doi.org/10.1016/j.elecom.2009.11.033
Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Baur, C., Strobl, G. F. X., & Brendel, R. (2010). Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes. Electrochemistry communications, 12(2), 231-233. https://doi.org/10.1016/j.elecom.2009.11.033
Garralaga Rojas E, Terheiden B, Plagwitz H, Hensen J, Baur C, Strobl GFX et al. Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes. Electrochemistry communications. 2010 Feb;12(2):231-233. Epub 2009 Dez 4. doi: 10.1016/j.elecom.2009.11.033
Garralaga Rojas, E. ; Terheiden, B. ; Plagwitz, H. et al. / Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes. in: Electrochemistry communications. 2010 ; Jahrgang 12, Nr. 2. S. 231-233.
Download
@article{d9e704aa0cd342e1884479e4f70dd314,
title = "Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes",
abstract = "We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.",
keywords = "Electrochemistry, Photovoltaics, Porous Ge",
author = "{Garralaga Rojas}, E. and B. Terheiden and H. Plagwitz and J. Hensen and C. Baur and Strobl, {G. F.X.} and R. Brendel",
note = "Funding Information: The financial support of this work by the German Ministry for Economy and Technology under contract No. 50JR0641 is gratefully acknowledged. E. Garralaga Rojas specially thanks the European Space Agency for the financial support of his work in the framework of the Networking Partnering Initiative (Co. No. 20250/06/NL/GLC).",
year = "2010",
month = feb,
doi = "10.1016/j.elecom.2009.11.033",
language = "English",
volume = "12",
pages = "231--233",
journal = "Electrochemistry communications",
issn = "1388-2481",
publisher = "Elsevier Inc.",
number = "2",

}

Download

TY - JOUR

T1 - Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes

AU - Garralaga Rojas, E.

AU - Terheiden, B.

AU - Plagwitz, H.

AU - Hensen, J.

AU - Baur, C.

AU - Strobl, G. F.X.

AU - Brendel, R.

N1 - Funding Information: The financial support of this work by the German Ministry for Economy and Technology under contract No. 50JR0641 is gratefully acknowledged. E. Garralaga Rojas specially thanks the European Space Agency for the financial support of his work in the framework of the Networking Partnering Initiative (Co. No. 20250/06/NL/GLC).

PY - 2010/2

Y1 - 2010/2

N2 - We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.

AB - We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.

KW - Electrochemistry

KW - Photovoltaics

KW - Porous Ge

UR - http://www.scopus.com/inward/record.url?scp=74149092093&partnerID=8YFLogxK

U2 - 10.1016/j.elecom.2009.11.033

DO - 10.1016/j.elecom.2009.11.033

M3 - Article

AN - SCOPUS:74149092093

VL - 12

SP - 231

EP - 233

JO - Electrochemistry communications

JF - Electrochemistry communications

SN - 1388-2481

IS - 2

ER -