Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 231-233 |
Seitenumfang | 3 |
Fachzeitschrift | Electrochemistry communications |
Jahrgang | 12 |
Ausgabenummer | 2 |
Frühes Online-Datum | 4 Dez. 2009 |
Publikationsstatus | Veröffentlicht - Feb. 2010 |
Extern publiziert | Ja |
Abstract
We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Elektrochemie
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in: Electrochemistry communications, Jahrgang 12, Nr. 2, 02.2010, S. 231-233.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes
AU - Garralaga Rojas, E.
AU - Terheiden, B.
AU - Plagwitz, H.
AU - Hensen, J.
AU - Baur, C.
AU - Strobl, G. F.X.
AU - Brendel, R.
N1 - Funding Information: The financial support of this work by the German Ministry for Economy and Technology under contract No. 50JR0641 is gratefully acknowledged. E. Garralaga Rojas specially thanks the European Space Agency for the financial support of his work in the framework of the Networking Partnering Initiative (Co. No. 20250/06/NL/GLC).
PY - 2010/2
Y1 - 2010/2
N2 - We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.
AB - We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25-65% are obtained for etching current densities of 1-15 mA cm-2 with the specific resistivity of the Ge substrates lying in the (0.020-0.032) Ω cm range and electrolyte HF concentrations in the range of 35-50 wt.%.
KW - Electrochemistry
KW - Photovoltaics
KW - Porous Ge
UR - http://www.scopus.com/inward/record.url?scp=74149092093&partnerID=8YFLogxK
U2 - 10.1016/j.elecom.2009.11.033
DO - 10.1016/j.elecom.2009.11.033
M3 - Article
AN - SCOPUS:74149092093
VL - 12
SP - 231
EP - 233
JO - Electrochemistry communications
JF - Electrochemistry communications
SN - 1388-2481
IS - 2
ER -