Details
Originalsprache | Englisch |
---|---|
Aufsatznummer | 153828 |
Fachzeitschrift | Journal of alloys and compounds |
Jahrgang | 825 |
Publikationsstatus | Veröffentlicht - 5 Juni 2020 |
Extern publiziert | Ja |
Abstract
Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Ingenieurwesen (insg.)
- Maschinenbau
- Werkstoffwissenschaften (insg.)
- Metalle und Legierungen
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Journal of alloys and compounds, Jahrgang 825, 153828, 05.06.2020.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping
AU - Vivas, M. G.
AU - Manoel, D. S.
AU - Dipold, J.
AU - Martins, R. J.
AU - Fonseca, R. D.
AU - Manglano-Clavero, I.
AU - Margenfeld, C.
AU - Waag, A.
AU - Voss, T.
AU - Mendonca, C. R.
N1 - Funding information: Financial support from FAPESP (Fundação de Amparo à Pesquisa do Estado de São Paulo, grants 2018/11283-7 and 2015/20032-0 ), FAPEMIG (Fundação de Amparo à Pesquisa do Estado de Minas Gerais, APQ-01469-18 ), CNPq (Conselho Nacional de Desenvolvimento Científico e Tecnológico), Coordenação de Aperfeiçoamento de Pessoal de Nível Superior ( CAPES ) and the Air Force Office of Scientific Research ( FA9550-15-1-0521 ) are acknowledged. A. W. and T. V. acknowledge funding by the Deutsche Forschungsgemeinschaft ( DFG , German Research Foundation ) under Germany’s Excellence Strategy – EXC-2123/1.
PY - 2020/6/5
Y1 - 2020/6/5
N2 - Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.
AB - Semiconductors thin films are the foundation of modern technology. While the nonlinear optical (NLO) properties of bulk semiconductors have been systematically studied in the last three decades, it is still a great challenge to obtain them for semiconductors thin films, as the high laser irradiance in NLO experiments tends to irreversibly damage the thin films. In addition, tuning the NLO response of semiconductor thin films by alloying and doping has not been explored yet. Here, we study the influence of the Aluminum content in AlxGa1-xN thin films and the n-type doping concentration in GaN thin films on their two-photon absorption (2PA) coefficients. For this, we investigate five different GaN-based thin films: an unintentionally doped one with no Al as a reference, two n-type doped GaN films with distinct concentrations of silicon impurities, and two AlxGa1-xN alloys with an aluminum content of 5.5% and 9.0%, respectively. The femtosecond 2PA spectra reveal that doping impurities reduce the non-linear coefficients (∼10%), while alloying with Al enhances the 2PA coefficient up to 30%. We use the model of Brandi and Araujo to determine Kane's energy parameter related to the transition matrix element for each sample and compare them with recent theoretical studies based on the k·p theory where an excellent agreement is found.
KW - AlGaN thin films
KW - Alloying and doping
KW - Gallium nitride
KW - Nonlinear optical properties
KW - Spectroscopy
KW - Two-photon absorption
UR - http://www.scopus.com/inward/record.url?scp=85078677412&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2020.153828
DO - 10.1016/j.jallcom.2020.153828
M3 - Article
AN - SCOPUS:85078677412
VL - 825
JO - Journal of alloys and compounds
JF - Journal of alloys and compounds
SN - 0925-8388
M1 - 153828
ER -