Carbon-containing group IV heterostructures on Si: Properties and device applications

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • H. J. Osten
  • R. Barth
  • G. Fischer
  • B. Heinemann
  • D. Knoll
  • G. Lippert
  • H. Rücker
  • P. Schley
  • W. Röpke

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)11-14
Seitenumfang4
FachzeitschriftTHIN SOLID FILMS
Jahrgang321
Ausgabenummer1-2
PublikationsstatusVeröffentlicht - 26 Mai 1998
Extern publiziertJa

Abstract

We review some important material properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001). This new material might overcome some of the limitations of strained Si1-xGey and open new fields for device applications of heteroepitaxial Si-based systems. In addition, we demonstrated incorporating low carbon concentrations (<1020 cm-3) into the SiGe region of a heterobipolar transistor (HBT) can significantly suppress boron outdiffusion caused by later processing steps. The static characteristics demonstrate that the transistors should be suitable for circuit applications. Comparing the high-frequency performance of MBE-grown SiGe:C HBTs with identically SiGe HBTs we found an increase in fT and fmax by a factor of more than 2 for our chosen SiGe profile. This indicates that adding carbon enabled one to use implantation steps without affecting the boron profile, that is, it offers wider latitude in process margins.

ASJC Scopus Sachgebiete

Zitieren

Carbon-containing group IV heterostructures on Si: Properties and device applications. / Osten, H. J.; Barth, R.; Fischer, G. et al.
in: THIN SOLID FILMS, Jahrgang 321, Nr. 1-2, 26.05.1998, S. 11-14.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Osten, HJ, Barth, R, Fischer, G, Heinemann, B, Knoll, D, Lippert, G, Rücker, H, Schley, P & Röpke, W 1998, 'Carbon-containing group IV heterostructures on Si: Properties and device applications', THIN SOLID FILMS, Jg. 321, Nr. 1-2, S. 11-14. https://doi.org/10.1016/S0040-6090(98)00435-0
Osten, H. J., Barth, R., Fischer, G., Heinemann, B., Knoll, D., Lippert, G., Rücker, H., Schley, P., & Röpke, W. (1998). Carbon-containing group IV heterostructures on Si: Properties and device applications. THIN SOLID FILMS, 321(1-2), 11-14. https://doi.org/10.1016/S0040-6090(98)00435-0
Osten HJ, Barth R, Fischer G, Heinemann B, Knoll D, Lippert G et al. Carbon-containing group IV heterostructures on Si: Properties and device applications. THIN SOLID FILMS. 1998 Mai 26;321(1-2):11-14. doi: 10.1016/S0040-6090(98)00435-0
Osten, H. J. ; Barth, R. ; Fischer, G. et al. / Carbon-containing group IV heterostructures on Si : Properties and device applications. in: THIN SOLID FILMS. 1998 ; Jahrgang 321, Nr. 1-2. S. 11-14.
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abstract = "We review some important material properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001). This new material might overcome some of the limitations of strained Si1-xGey and open new fields for device applications of heteroepitaxial Si-based systems. In addition, we demonstrated incorporating low carbon concentrations (<1020 cm-3) into the SiGe region of a heterobipolar transistor (HBT) can significantly suppress boron outdiffusion caused by later processing steps. The static characteristics demonstrate that the transistors should be suitable for circuit applications. Comparing the high-frequency performance of MBE-grown SiGe:C HBTs with identically SiGe HBTs we found an increase in fT and fmax by a factor of more than 2 for our chosen SiGe profile. This indicates that adding carbon enabled one to use implantation steps without affecting the boron profile, that is, it offers wider latitude in process margins.",
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T2 - Properties and device applications

AU - Osten, H. J.

AU - Barth, R.

AU - Fischer, G.

AU - Heinemann, B.

AU - Knoll, D.

AU - Lippert, G.

AU - Rücker, H.

AU - Schley, P.

AU - Röpke, W.

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Y1 - 1998/5/26

N2 - We review some important material properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically on Si(001). This new material might overcome some of the limitations of strained Si1-xGey and open new fields for device applications of heteroepitaxial Si-based systems. In addition, we demonstrated incorporating low carbon concentrations (<1020 cm-3) into the SiGe region of a heterobipolar transistor (HBT) can significantly suppress boron outdiffusion caused by later processing steps. The static characteristics demonstrate that the transistors should be suitable for circuit applications. Comparing the high-frequency performance of MBE-grown SiGe:C HBTs with identically SiGe HBTs we found an increase in fT and fmax by a factor of more than 2 for our chosen SiGe profile. This indicates that adding carbon enabled one to use implantation steps without affecting the boron profile, that is, it offers wider latitude in process margins.

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