Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 25081-25089 |
| Seitenumfang | 9 |
| Fachzeitschrift | NANOSCALE |
| Jahrgang | 17 |
| Ausgabenummer | 43 |
| Publikationsstatus | Veröffentlicht - 2 Okt. 2025 |
Abstract
van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The device showed an excellent performance, including a high photoresponsivity (R) of 4129.3 A W-1, competitive high specific detectivity (D*) of 2.8 × 1011 cm Hz1/2 W-1, and very low noise equivalent power (NEP) of 2.8 × 10-15 W Hz-1/2 with 0.32 nW of 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, a decay time (τd) of 2.8 μs, and a high dichroic ratio of ∼2.12 under 637 nm laser irradiation. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
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in: NANOSCALE, Jahrgang 17, Nr. 43, 02.10.2025, S. 25081-25089.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A polarization-sensitive photodetector based on a b-AsP/In2Se3 heterostructure
AU - Ju, Le
AU - Zou, Binqian
AU - Wang, Suofu
AU - Sun, Song
AU - Han, Tao
AU - Li, Feng
AU - Hou, Xingyuan
AU - Zhang, Min
AU - Ding, Fei
AU - Shan, Lei
AU - Long, Mingsheng
PY - 2025/10/2
Y1 - 2025/10/2
N2 - van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The device showed an excellent performance, including a high photoresponsivity (R) of 4129.3 A W-1, competitive high specific detectivity (D*) of 2.8 × 1011 cm Hz1/2 W-1, and very low noise equivalent power (NEP) of 2.8 × 10-15 W Hz-1/2 with 0.32 nW of 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, a decay time (τd) of 2.8 μs, and a high dichroic ratio of ∼2.12 under 637 nm laser irradiation. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.
AB - van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The device showed an excellent performance, including a high photoresponsivity (R) of 4129.3 A W-1, competitive high specific detectivity (D*) of 2.8 × 1011 cm Hz1/2 W-1, and very low noise equivalent power (NEP) of 2.8 × 10-15 W Hz-1/2 with 0.32 nW of 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, a decay time (τd) of 2.8 μs, and a high dichroic ratio of ∼2.12 under 637 nm laser irradiation. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.
UR - http://www.scopus.com/inward/record.url?scp=105021023530&partnerID=8YFLogxK
U2 - 10.1039/d5nr02575c
DO - 10.1039/d5nr02575c
M3 - Article
C2 - 41133283
AN - SCOPUS:105021023530
VL - 17
SP - 25081
EP - 25089
JO - NANOSCALE
JF - NANOSCALE
SN - 2040-3364
IS - 43
ER -